논문초록
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The increasing demand for logic-in-memory devices, this study explores optical logic-in-memory utilizing light for improved efficiency. Therefore, optical device was fabricated, employing pNDI-SVS floating gates on a paper substrate and dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) organic semiconductor. Programmability was confirmed at 660 nm, 530 nm, and 455 nm due to narrow bandgap of pNDI-SVS, responsive to broadband light. Also, stable optical memory characteristics and 500 seconds retention post continuous were observed. Furthermore, it was demonstrated stable operation in bending tests and evaluations for various flexible device characteristics. Demonstrating a complementary inverter with an amorphous indium gallium zinc oxide (a-IGZO) transistor confirmed the device's robustness and flexibility in papertronics applications, suggesting efficient logic-in-memory devices. |